Datasheet IRFZ34NLPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFZ34NLPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve	International Rectifier

IRFZ34NL Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFZ34NL	(IRFZ34NS/L) Power MOSFET PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A S Description Fif	International Rectifier
IRFZ34NLPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec	International Rectifier

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