Datasheet IRFZ34NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFZ34NPBF	HEXFET Power MOSFET PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to	International Rectifier

IRFZ34N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFZ34N	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ34N FEATURES ·Advanced Process Technology ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated DESCRIPTION ·Designed for use in switch mode power su	Inchange Semiconductor
IRFZ34N	Power MOSFET ( Transistor ) PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l l D VDSS = 55V G S RDS(on) = 0.040Ω ID = 29A Fifth Generation HEXFETs fr	International Rectifier
IRFZ34NL	(IRFZ34NS/L) Power MOSFET PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A S Description Fif	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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