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IRFZ44N 데이터시트 PDF 검색 결과

번호 부품번호 상세설명 및 전자부품 기능 제조사 PDF
11 IRFZ44N   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode

INCHANGE
INCHANGE
IRFZ44N pdf 데이터시트
10 IRFZ44N   N-CHANNEL Power MOSFET

APPLICATION ‹ Buck Converter High Side Switch ‹DC motor control , Ups ...etc , & other Application VDSS 55V RDS(ON) Max. 17.5mȍ PIN CONFIGURATION TO-220 Front View ID 50A IRFZ44N N-CHANNEL Power MOSFET FEATURES ‹Ultra Low ON Resistance ‹Low Gate Charge ‹ Dynamic dv/dt Rating ‹ Inductive Switching Curves ‹ Peak Current vs Pulse Width Curve SYMBOL D GATE DRAIN SOURCE G S 12 3 ʳ ABSOLUTE MAXIMUM RATINGS N-Channel MOSFET Rating Drain t

Matsu
Matsu
IRFZ44N pdf 데이터시트
9 IRFZ44N   Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
IRFZ44N pdf 데이터시트
8 IRFZ44N   N-channel enhancement mode TrenchMOS transistor

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching

NXP
NXP
IRFZ44N pdf 데이터시트
7 IRFZ44N   Power MOSFET

PD - 94053 IRFZ44N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 17.5mΩ G S ID = 49A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching

International Rectifier
International Rectifier
IRFZ44N pdf 데이터시트
6 IRFZ44NL   (IRFZ44NL / IRFZ44NS) Power MOSFET

PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast

International Rectifier
International Rectifier
IRFZ44NL pdf 데이터시트
5 IRFZ44NLPBF   Power MOSFET

l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are

International Rectifier
International Rectifier
IRFZ44NLPBF pdf 데이터시트
4 IRFZ44NPBF   Power MOSFET

PD - 94787 IRFZ44NPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pro

International Rectifier
International Rectifier
IRFZ44NPBF pdf 데이터시트


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