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Datasheet IRLU2905 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IRLU2905 | Power MOSFET, Transistor PD- 91334E
IRLR/U2905
HEXFET® Power MOSFET
l l l l l l l
Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.027Ω ID = 42A
Description
Fifth Generatio |  International Rectifier | mosfet |
| 2 | IRLU2905PBF | Power MOSFET, Transistor IRLR/U2905PbF
l l l l l l l l
PD- 95084A
Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.027Ω
G S
ID = 42A
Description | International Rectifier | mosfet |
| 3 | IRLU2905Z | Power MOSFET, Transistor PD - 95848
AUTOMOTIVE MOSFET
IRLR2905Z IRLU2905Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ● ●
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 13.5mΩ ID = | International Rectifier | mosfet |
| 4 | IRLU2905ZPBF | Power MOSFET, Transistor PD - 95774A
AUTOMOTIVE MOSFET
IRLR2905ZPbF IRLU2905ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l l
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V
G S
RDS(on) = 13.5m� | International Rectifier | mosfet |
IRL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRL1004 | HEXFET Power MOSFET
PD - 91702B
IRL1004
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
D
VDSS = 40V RDS(on) = 0.0065Ω
G
ID = 130A International Rectifier mosfet | | |
| 2 | IRL1004L | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
| 3 | IRL1004LPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
| 4 | IRL1004PBF | Power MOSFET, Transistor l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec International Rectifier mosfet | | |
| 5 | IRL1004S | HEXFET Power MOSFET
PD - 91644A
IRL1004S IRL1004L
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
VDSS = 40V
G S
RDS(on) = 0.0065� International Rectifier mosfet | | |
| 6 | IRL1004SPBF | (IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRL1004SPbF IRL1004LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
G S
R International Rectifier mosfet | | |
| 7 | IRL1104 | HEXFET Power MOSFET
PD -91805
IRL1104
HEXFET® Power MOSFET
Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
International Rectifier mosfet | |
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