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Datasheet IRLZ14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRLZ14 | Power MOSFET ( Transistor ) PD - 9.903A
IRLZ14S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching
D
VDSS = 60V RDS(on) = 0.20Ω
G S
ID = 10A
Description
Third Generation HEXFETs from International Rectifie |
 International Rectifier |
 |
| 3 | IRLZ14 | Power MOSFET ( Transistor ) IRLZ14, SiHLZ14
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 8.4 3.5 6.0 Single
D
FEATURES
60 0.20
• Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating |
 Vishay Siliconix |
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| 2 | IRLZ14L | Power MOSFET ( Transistor ) www.DataSheet.co.kr
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.0 Single
D
FEATURES
60 0.20
• Halogen-free According to IEC 61249-2-21 Definition • Advanced Process |
Vishay Siliconix |
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| 1 | IRLZ14S | Power MOSFET ( Transistor ) www.DataSheet.co.kr
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 3.5 6.0 Single
D
FEATURES
60 0.20
• Halogen-free According to IEC 61249-2-21 Definition • Advanced Process |
Vishay Siliconix |
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