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ISL9N312AP3 PDF Datasheet

The ISL9N312AP3 is N-channel LogIC Level Pwm Optimized Ultrafet Trench Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 ISL9N312AP3
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AP3/ISL9N312AS3ST January 2002 ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converte

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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Recommended search results related to ISL9N312AP3

Part No Description ( Function) Manufacturers PDF
ISL9N312AD3   N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AD3 / ISL9N312AD3ST June 2002 ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
ISL9N312AD3ST   N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AD3 / ISL9N312AD3ST June 2002 ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
ISL9N312AS3ST   N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AP3/ISL9N312AS3ST January 2002 ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf

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