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Datasheet ISL9V3040D3S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
3 ISL9V3040D3S   N-Channel Ignition IGBT

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 October 20 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKŠ 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that
Fairchild Semiconductor
Fairchild Semiconductor
datasheet ISL9V3040D3S pdf
2 ISL9V3040D3S   EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 April 2003 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that of
Fairchild Semiconductor
Fairchild Semiconductor
datasheet ISL9V3040D3S pdf
1 ISL9V3040D3S   N-CHANNEL IGNITION IGBT

UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to provide customers with outstanding SCIS capab
Unisonic Technologies
Unisonic Technologies
datasheet ISL9V3040D3S pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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