| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | IXYP15N65C3 | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP15N65C3 VCES = 650V IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Con |
 IXYS |
|
| 2 | IXYP15N65C3D1 | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum |
IXYS |
|
| 1 | IXYP15N65C3D1M | IGBT ( Insulated Gate Bipolar Transistor ) XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) Preliminary Technical Information IXYP15N65C3D1M VCES = 650V IC110 = 9A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to |
IXYS |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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