J13009 데이터시트 PDF ( Data sheet )

FJP13009 High Voltage Fast-Switching NPN Power Transistor March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Po

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, conver

SEMICONDUCTOR FJA13009 Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 12A/400V/130W 5 . 0 ±0 . 2 RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min FEATURES High-speed switching High collector to base voltage VCBO S

FJA13009 FJA13009 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO

WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting s