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Datasheet JDH3D01S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○ For wave detection
¾ Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~1 |
Toshiba Semiconductor |
JDH3D Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type |
Toshiba Semiconductor |
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JDH3D01FV | Diode Silicon Epitaxial Schottky Barrier Type |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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