|
|
Datasheet JDV2S13FS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | JDV2S13FS | Silicon Epitaxial Planar Type JDV2S13FS
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S13FS
VCO for the UHF band
• • • High capacitance ratio: C1V/C4V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) This device is suitable for use in a small-size tuner.
カソードマーク
Unit: mm
0. | Toshiba Semiconductor | data |
JDV Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | JDV2S01E | VCO for UHF band JDV2S01E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.5 Ω (typ.)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperat Toshiba Semiconductor data | | |
2 | JDV2S01S | TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S
VCO for UHF band
Unit in mm • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics Reverse Toshiba Semiconductor diode | | |
3 | JDV2S02E | VCO for UHF band JDV2S02E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage tempera Toshiba Semiconductor data | | |
4 | JDV2S05E | VCO
JDV2S05E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
VCO for UHF band
• • • Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Toshiba Semiconductor data | | |
5 | JDV2S07S | VCO for UHF Band Radio JDV2S07S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S07S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reve Toshiba Semiconductor data | | |
6 | JDV2S08S | VCO for UHF Band Radio JDV2S08S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reve Toshiba Semiconductor data | | |
7 | JDV2S10FS | Silicon Epitaxial Planar Type VCO JDV2S10FS
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10FS
VCO for the UHF band
• • • High capacitance ratio: C0.5V/C2.5V =2.55 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
カソードマーク
Unit: mm Toshiba Semiconductor data | |
Esta página es del resultado de búsqueda del JDV2S13FS. Si pulsa el resultado de búsqueda de JDV2S13FS se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |