Datasheet K193 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	K193	N-Channel FET (2SK193)	NEC	mosfet
2	K1930	N-Channel MOSFET, 2SK1930 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 2.0 S (typ.) l Low leak	Toshiba Semiconductor	data
3	K1933	N-Channel MOSFET, 2SK1933 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta =	Hitachi Semiconductor	data
4	K1938	N-Channel MOSFET, 2SK1938 INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1938 DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATI	Inchange Semiconductor	data

K19 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K1904	N-Channel MOSFET, 2SK1904 Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1904] 10.0 3.2 3.5	Sanyo Semiconductor Corporation	data
2	K1908	N-Channel MOSFET, 2SK1908	Sanyo Semicon Device	data
3	K1917	N-Channel MOSFET, 2SK1917	Fuji Electric	data
4	K1918	Silicon N-Channel MOS FET 2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings	Hitachi	mosfet
5	K192A	N-Channel MOSFET, 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm · High power gain: GPS = 24dB (typ.) (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: \|Yfs\| = 7 mS	Toshiba Semiconductor	data
6	K193	N-Channel FET (2SK193)	NEC	mosfet
7	K1930	N-Channel MOSFET, 2SK1930 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 2.0 S (typ.) l Low leak	Toshiba Semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
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