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Datasheet K2936 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K2936 | MOSFET ( Transistor ) - 2SK2936 www.DataSheet.co.kr
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2 |
 Hitachi Semiconductor |
 |
| 1 | K2936 | Silicon N Channel MOS FET 2SK2936
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1050-0400 (Previous: ADE-208-559B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A |
 Renesas |
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