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Datasheet K4S643233H-FC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4S643233H-FC | Mobile-SDRAM K4S643233H - F(H)E/N/G/C/L/F
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. | Samsung semiconductor | data |
K4S Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4S160822D | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL K4S160822D
CMOS SDRAM
2Mx8 SDRAM
1M x 8bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.0 October 1999
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.0 (Oct. 1999)
K4S160822D
Revision History
Revision 1.0 (October 1999)
CMOS SDRAM
-2-
R Samsung semiconductor data | | |
2 | K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al Samsung semiconductor data | | |
3 | K4S161622E | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
4 | K4S161622E-TC10 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
5 | K4S161622E-TC55 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
6 | K4S161622E-TC60 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
7 | K4S161622E-TC70 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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