Datasheet K4X56163PE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
3	K4X56163PE	16M x16 Mobile DDR SDRAM K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad	Samsung semiconductor
2	K4X56163PE-LFG	16M x16 Mobile DDR SDRAM K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad	Samsung semiconductor
1	K4X56163PE-LG	16M x16 Mobile DDR SDRAM K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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