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Datasheet K4Y50084UC Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K4Y50084UC512Mbit XDR TM DRAM

K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRAN
Samsung semiconductor
Samsung semiconductor
data


K4Y Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K4Y50024UC512Mbit XDR TM DRAM

K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRAN
Samsung semiconductor
Samsung semiconductor
data
2K4Y50044UC512Mbit XDR TM DRAM

K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRAN
Samsung semiconductor
Samsung semiconductor
data
3K4Y50084UC512Mbit XDR TM DRAM

K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRAN
Samsung semiconductor
Samsung semiconductor
data
4K4Y50164UC512Mbit XDR TM DRAM

K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM 512Mbit XDR TM DRAM(C-die) Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRAN
Samsung semiconductor
Samsung semiconductor
data
5K4Y54044UFXDR/RDRAM

K4Y5416(/08/04)4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Da
Samsung Semiconductor
Samsung Semiconductor
data
6K4Y54084UFXDR/RDRAM

K4Y5416(/08/04)4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Da
Samsung Semiconductor
Samsung Semiconductor
data
7K4Y54164UFXDR/RDRAM

K4Y5416(/08/04)4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Da
Samsung Semiconductor
Samsung Semiconductor
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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