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Datasheet K6X4016C3F-TB55 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K6X4016C3F-TB55 | 256Kx16 bit Low Power full CMOS Static RAM K6X4016C3F Family
Document Title
256Kx16 bit Low Power full CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type. Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 10mA to 7mA - Change | Samsung semiconductor | cmos |
K6X Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K6X0808C1D | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
2 | K6X0808C1D-DF55 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
3 | K6X0808C1D-DF70 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
4 | K6X0808C1D-F | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
5 | K6X0808C1D-GF55 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
6 | K6X0808C1D-GF70 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | | |
7 | K6X0808C1D-GQ55 | 32Kx8 bit Low Power CMOS Static RAM K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X Samsung semiconductor cmos | |
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Número de pieza | Descripción | Fabricantes | |
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