Datasheet K7R323682C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	K7R323682C	(K7R32xx82C) QDR II b2 SRAM K7R323682C K7R321882C K7R320982C 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS	Samsung semiconductor	ram

K7R Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K7R161884B	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
2	K7R161884B-FC16	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
3	K7R161884B-FC20	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
4	K7R161884B-FC25	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
5	K7R161884B-FC30	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
6	K7R163684B	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram
7	K7R163684B-FC16	512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram	Samsung semiconductor	ram

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Número de pieza	Descripción	Fabricantes	PDF
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