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Datasheet K9K2G08Q0M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K9K2G08Q0M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |  Samsung semiconductor | data |
| 2 | K9K2G08Q0M-P | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft | Samsung semiconductor | data |
| 3 | K9K2G08Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9W4G08U1M K9K2G08Q0M K9K2G08U0M
K9W4G16U1M K9K2G16Q0M K9K2G16U0M
FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA
Draft | Samsung semiconductor | data |
| 4 | K9K2G08Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue
1. | Samsung semiconductor | data |
| 5 | K9K2G08Q0M-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue
1. | Samsung semiconductor | data |
K9K Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K9K1208D0C | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory K9F8008W0M-TCB0, K9F8008W0M-TIB0
Document Title
1M x 8 bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No.
0.0 1.0
History
Data Sheet 1997 Data Sheet 1998 1. Changed tBERS parameter : 5ms(Typ.) → 2ms(Typ.) 10ms(Max.) → 4ms(Max.) 2. Changed tPROG parameter : 1.5ms(Max.) → 1.0ms( Samsung semiconductor data | | |
| 2 | K9K1208Q0C | 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory K9K1208Q0C K9K1208D0C K9K1208U0C
K9K1216Q0C K9K1216D0C K9K1216U0C
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr Samsung semiconductor data | | |
| 3 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
| 4 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
| 5 | K9K1208U0A-YCB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
| 6 | K9K1208U0A-YIB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | | |
| 7 | K9K1208U0A-YIB0 | 64M x 8 Bit NAND Flash Memory K9K1208U0A-YCB0, K9K1208U0A-YIB0
Document Title 64M x 8 Bit NAND Flash Memory Revision History
Revision No
0.0
FLASH MEMORY
History
1. Initial issue - Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection). So, /SE pin is don’ t-cared regardless of external logic input level and is Samsung semiconductor data | |
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