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Datasheet KDR732V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KDR732V | SCHOTTKY BARRIER TYPE DIODE (TWIN TYPE/ CATHODE COMMON) SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS.
KDR732V
SCHOTTKY BARRIER TYPE DIODE (TWIN TYPE, CATHODE COMMON)
E B
FEATURES
Fast reverse recovery time (trr max=10nS) Low switching noise. Low leakage current and high rel | .gif){kind=small} KEC(Korea Electronics) | diode |
KDR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KDR105 | SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION) SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification (Switching regulators, converters, choppers)
E M B
KDR105
SCHOTTKY BARRIER TYPE DIODE
M D 3
FEATURES
A
Low Forward Voltage : VF max=0.55V. Low Leakage Current : IR max=10 A.
2
J
1
C
CHARACTERISTIC Repetitive Peak Reverse Voltage Rever KEC(Korea Electronics) diode | | |
| 2 | KDR105S | SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION) SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification (Switching regulators, converters, choppers)
L
KDR105S
SCHOTTKY BARRIER TYPE DIODE
E B
L
FEATURES
Low Forward Voltage : VF max=0.55V.
A G
DIM A
2
H D
MILLIMETERS _ 0.20 2.93 +
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.9 KEC(Korea Electronics) diode | | |
| 3 | KDR322 | SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.54V (Typ.). Low Reverse Current : IR=5 A (Max.). Small Package : USM.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forwa  KEC diode | | |
| 4 | KDR322 | SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) KEC(Korea Electronics) diode | | |
| 5 | KDR331 | SCHOTTKY BARRIER TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
KDR331
SCHOTTKY BARRIER TYPE DIODE
HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : USM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Fo KEC diode | | |
| 6 | KDR331 | SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING) KEC(Korea Electronics) diode | | |
| 7 | KDR331E | SCHOTTKY BARRIER TYPE DIODE SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.25(Typ.) @IF=5mA Small Package : ESM.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Po KEC diode | |
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