Datasheet KDV273UL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	KDV273UL	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO SEMICONDUCTOR TECHNICAL DATA KDV273UL VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) TENTATIVE C MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage	KEC

KDV27 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
KDV275E	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Low Series Resistance Excellent Linearity (CV Curve) KDV275E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK High Capacitance Ratio : C1V/C4V =3.4(Min.) C 1 E 2 D F MAXIMUM RATING (Ta=25 CHA	KEC(Korea Electronics)
KDV275	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =3.4(Min.) Low Series Resistance Excellent Linearity (CV Curve) KDV275 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G K E A H 2 D J C I MAXIMUM RA	KEC(Korea Electronics)
KDV273UL	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO SEMICONDUCTOR TECHNICAL DATA KDV273UL VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Typ.) Low Series Resistance : rs=0.39 (Typ.) TENTATIVE C MAXIMUM RATING (Ta=25 CHARACTERIS	KEC

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Número de pieza	Descripción	Fabricantes	PDF
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