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KSB13003C PDF Datasheet

The KSB13003C is NPN SilICon Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 KSB13003C
NPN Silicon Power Transistor

KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A General Description • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Features • VCBO = 800V • VCEO = 450V • VBEO = 9V • IC = 1.5A TO-92 TO-251 3 2 1 3 2 1 Ordering Information Ordering number KSB13003C KSB13003CR KSU13003C

SemiHow
SemiHow
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Recommended search results related to KSB13003C

Part No Description ( Function) Manufacturers PDF
KSB13003A   NPN Silicon Power Transistor

KSX13003A Series KSB13003A / KSG13003A KSC13003A / KSH13003A NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • High Speed Switching • Suitable for Electronic Ballast up to 21W Features • VCBO = 700V • VCEO = 400V • VBEO = 9V • IC

SemiHow
SemiHow
datasheet pdf
KSB13003E   NPN Silicon Power Transistor

KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • High Voltage, High Speed Switching • Suitable for Switching regulator, Inverters motor controls • 150୅ Max. Operating temperature • 8K

SemiHow
SemiHow
datasheet pdf
KSB13003H   NPN Silicon Power Transistor

KSX13003H Series KSB13003H KSC13003H / KSU13003H NPN Silicon Power Transistor, VCBO= 900V, VCEO= 530V, IC= 1.5A General Description • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Features • VCBO = 900V • VCEO = 530V • VBEO = 9V

SemiHow
SemiHow
datasheet pdf
13003   NPN Epitaxial Silicon Transistor

13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C

Elite Enterprises
Elite Enterprises
datasheet pdf
13003   HIGH VOLTAGE AND HIGH SPEED SWITCH

13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= − 40

HSiN
HSiN
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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This is a popular adjustable voltage regulator.
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