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Datasheet KSD560 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KSD560 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD560
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601
APPLICATIONS ·Desi |
 Inchange Semiconductor |
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| 2 | KSD560 | NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
 Samsung semiconductor |
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| 1 | KSD560 | Low Frequency Power Amplifier KSD560
KSD560
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use • Complement to KSB601
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Pa |
 Fairchild Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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