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Datasheet KSD986 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | KSD986 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KSD986
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min.) ·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage
APPLICATIONS ·They are suitable for use |
Inchange Semiconductor |
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2 | KSD986 | NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung semiconductor |
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1 | KSD986 | Audio Frequency Power Amplifier KSD985/986
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emit |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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