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Datasheet KTA2015 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | KTA2015 | PNP Transistor RoHS KTA2015
SOT-323
KTA2015 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM: 0.1 W (Tamb=25℃)
.,LCollector current
ICM: -0.5 Collector-base voltage
A
OV(BR)CBO:
-35 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
1. BASE 2. EMITTER
3. COLLECTOR
ICELE |
 WEJ |
 |
| 4 | KTA2015 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. ᴌComplementary to KTC4076.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |
 KEC |
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| 3 | KTA2015 | PNP General Purpose Transistors PNP General Purpose Transistors
P b Lead(Pb)-Free
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD
Tj Tstg
SO |
 WEITRON |
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| 2 | KTA2015 | PNP Transistor KTA2015
TRANSISTOR (PNP)
FEATURES Excellent hFE Linearity Complementary to KTC4076 APPLICATIONS General Purpose Switching
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-35
VCEO Collector-Emitter Voltage
-30
VEBO |
 Jin Yu Semiconductor |
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