| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | KTB1369 | Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB1369 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type KTD2061 APPLICATIONS ·High Voltage application ·TV, monitor vertical output application ·Driver stage |
 Inchange Semiconductor |
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| 1 | KTB1369 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA KTB1369 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION FEATURES High Breakdown Voltage : VCEO=-180V(Min.) High Transition Frequency : fT=100MHz(Typ.) High Current : IC(max)=-2A. Complementary to KTD2061. MAXIMUM RATING (Ta=25 ) CHA |
 KEC |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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