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Datasheet KTB989 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTB989 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌGood Linearity of hFE. ᴌComplementary to KTD1352.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dis |  KEC | transistor |
KTB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTB1124 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624.
KTB1124
EPITAXIAL PLANAR PNP TRANS KEC transistor | | |
| 2 | KTB1124 | EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER/ ELECTRICAL EQUIPMENT).gif){kind=small} KEC(Korea Electronics) transistor | | |
| 3 | KTB1151 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC KEC transistor | | |
| 4 | KTB1151 | EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) KEC(Korea Electronics) transistor | | |
| 5 | KTB1234T | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting sets to be made smaller and slimer. ᴌComplementary to KTD1854T.
C L
KTB1234T
EPI KEC transistor | | |
| 6 | KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE ᴌHigh Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Col KEC transistor | | |
| 7 | KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) KEC(Korea Electronics) transistor | |
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