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Datasheet KTD2060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTD2060 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2060
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Comp |
 Inchange Semiconductor |
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| 1 | KTD2060 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTD2060
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Good Linearity of hFE. Complementary to KTB1368.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Co |
 KEC |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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