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Datasheet L2SD2114KVLT1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) 3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available.
L2SD2 |
Leshan Radio Company |
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1 | L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) 3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available.
L2SD2 |
Leshan Radio Company |
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Número de pieza | Descripción | Fabricantes | |
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