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Datasheet LET9006 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | LET9006 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET9006
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SU |
STMicroelectronics |
LET9 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
LET9150 | RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs |
ST Microelectronics |
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LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
STMicroelectronics |
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LET9085 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
STMicroelectronics |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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