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Datasheet M02N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | M02N60 | N Channel MOSFET N Channel MOSFET 2.0A
M02N60
PIN CONFIGURATION
TO-251 TO-252
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) |
Stanson Technology |
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1 | M02N60B | N Channel MOSFET N Channel MOSFET 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at |
Stanson Technology |
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Número de pieza | Descripción | Fabricantes | |
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