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Datasheet MBT3906DW1T1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MBT3906DW1T1 | Dual General Purpose Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six |
 Motorola Semiconductors |
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| 3 | MBT3906DW1T1 | Dual General Purpose Transistors |
 Leshan Radio Company |
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| 2 | MBT3906DW1T1 | Dual General Purpose Transistor MBT3906DW1T1 Dual General Purpose Transistor
The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices i |
 ON Semiconductor |
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| 1 | MBT3906DW1T1G | Dual General Purpose Transistor MBT3906DW1T1G Dual General Purpose Transistor
The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices |
ON Semiconductor |
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