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Datasheet ME4410 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ME4410 | N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION
The ME4410 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul |
 Matsuki |
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| 3 | ME4410A | N-Channel 30-V (D-S) MOSFET ME4410A
N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are |
Matsuki |
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| 2 | ME4410B | N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET
ME4410B/ME4410B-G
GENERAL DESCRIPTION
The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
Matsuki |
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| 1 | ME4410B-G | N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET
ME4410B/ME4410B-G
GENERAL DESCRIPTION
The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
Matsuki |
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