Datasheet ME4410B-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ME4410B-G	N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These	Matsuki

ME4410 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ME4410A	N-Channel 30-V (D-S) MOSFET ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc	Matsuki
ME4410	N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4410 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These	Matsuki
ME4410B	N-Channel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET ME4410B/ME4410B-G GENERAL DESCRIPTION The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-sta	Matsuki

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