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Datasheet MEM556 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MEM556 | (MEMxxx) P-Channel Enhancement Mode MOSFET |  General Instrument | mosfet |
MEM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MEM2012T101RT0S1 | SMD (1/2)
3-terminal Filters(SMD) For Signal Line
MEM Series MEM2012T-S1 Type
FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, a  TDK data | | |
| 2 | MEM2012T201RT0S1 | SMD (1/2)
3-terminal Filters(SMD) For Signal Line
MEM Series MEM2012T-S1 Type
FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, a TDK data | | |
| 3 | MEM2012T25R0T0S1 | SMD (1/2)
3-terminal Filters(SMD) For Signal Line
MEM Series MEM2012T-S1 Type
FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, a TDK data | | |
| 4 | MEM2012T35R0T0S1 | SMD (1/2)
3-terminal Filters(SMD) For Signal Line
MEM Series MEM2012T-S1 Type
FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, a TDK data | | |
| 5 | MEM2012T50R0T0S1 | SMD (1/2)
3-terminal Filters(SMD) For Signal Line
MEM Series MEM2012T-S1 Type
FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, a TDK data | | |
| 6 | MEM2309 | P-Channel MOSFET MEM2309
P-Channel MOSFET MEM2309S Descriptionÿ
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power  MicrOne mosfet | | |
| 7 | MEM4X16E43VTW-5 | 4 MEG x 16 EDO DRAM 4 MEG x 16 EDO DRAM
EDO DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 column addresses (4) 13 row, 9 column addresses (8) • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-  ETC data | |
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