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Datasheet MGSF3442XT3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MGSF3442XT3 | Small-Signal MOSFETs Single N-Channel Field Effect Transistors MGSF3442XT1
Preliminary Information
Low RDS(on) Small-Signal MOSFETs Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small |  ON Semiconductor | mosfet |
MGS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MGS-70008 | Reflective SPDT GaAs MMIC Switch Reflective SPDT GaAs MMIC Switch Technical Data
MGS-70008
Features
• Single-Pole, Double-Throw Output • Broad Bandwidth: DC to 3␣ GHz • Low Insertion Loss: 0.8␣ dB␣ Typical at 1␣ GHz • Fast Switching Time: 3␣ ns␣ Typical • Ultra Low DC Power Consumption • Small Surface-Mount .gif){kind=small} Agilent(Hewlett-Packard) data | | |
| 2 | MGS-71008 | Absorptive SPDT GaAs MMIC Switch Absorptive SPDT GaAs MMIC Switch Technical Data
MGS-71008
Features
• Single-Pole, Double-Throw Output • Broad Bandwidth: DC to 3␣ GHz • High Isolation: 37␣ dB␣ Typical at 1␣ GHz • Fast Switching Time: 3␣ ns␣ Typical • Ultra Low DC Power Consumption • Small Surface-Mount Plas Agilent(Hewlett-Packard) data | | |
| 3 | MGS05N60D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS05N60D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient ope  Motorola Semiconductors transistor | | |
| 4 | MGS05N60D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS05N60D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in effici  ON transistor | | |
| 5 | MGS1100 | Carbon Monoxide Gas Sensor Motorola Semiconductors sensor | | |
| 6 | MGS13002D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS13002D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient ope Motorola Semiconductors transistor | | |
| 7 | MGS13002D | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGS13002D/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in effici ON transistor | |
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