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Datasheet MGY25N120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MGY25N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl |
 Motorola Semiconductors |
 |
| 3 | MGY25N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage bloc |
 ON |
|
| 2 | MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY25N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p |
Motorola Semiconductors |
|
| 1 | MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY25N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p |
ON |
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