Datasheet MGY40N60D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MGY40N60D	Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–pac	Motorola Semiconductors

MGY40N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MGY40N60	Insulated Gate Bipolar Transistor MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliabl	Motorola Semiconductors
MGY40N60D	Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transisto	Motorola Semiconductors

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