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Datasheet MHW8185 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MHW8185 | 19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW8185/D
High Output Power Doubler 860 MHz CATV Amplifier
• Specified for 77, 110 and 128–Channel Performance • Broadband Power Gain @ f = 40 – 860 MHz Gp = 19.4 dB (Typ) • Broadband Noise Figure NF = 7 dB (Ty | Motorola Semiconductors | amplifier |
2 | MHW8185R | 19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW8185R/D
High Output Mirror Power Doubler 860 MHz CATV Amplifier
• Specified for 77, 110 and 128–Channel Performance • Broadband Power Gain @ f = 860 MHz Gp = 19.4 dB (Typ) • Broadband Noise Figure NF = 7 dB (T | Motorola Semiconductors | amplifier |
MHW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MHW10186N | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10186N Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology � Freescale Semiconductor amplifier | | |
2 | MHW10188AN | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10188AN Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • Ga Freescale Semiconductor amplifier | | |
3 | MHW10236N | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10236N Rev. 0, 11/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology � Freescale Semiconductor amplifier | | |
4 | MHW10247AN | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10247AN Rev. 0, 7/2006
Gallium Arsenide CATV Amplifier Module
Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaA Freescale Semiconductor amplifier | | |
5 | MHW10276N | Gallium Arsenide CATV Amplifier Module Freescale Semiconductor Technical Data
Document Number: MHW10276N Rev. 0, 7/2006
LIFETIME BUY
Features • 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology • Unconditionally S Freescale Semiconductor amplifier | | |
6 | MHW105 | Hybrid Power Module MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW105/D
VHF Power Amplifier
The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. � Motorola Semiconductors data | | |
7 | MHW1134 | Low Distortion Wideband Amplifiers MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW1134/D
Low Distortion Wideband Amplifiers
. . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way ca Motorola Semiconductors amplifier | |
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Número de pieza | Descripción | Fabricantes | |
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