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Datasheet MJD44H11 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | MJD44H11 | Silicon NPN Power Transistor isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD44H11
DESCRIPTION ·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device perf |
 Inchange Semiconductor |
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| 6 | MJD44H11 | Complementary Power Transistors SMD Type
Transistors
Complementary Power Transistors MJD44H11
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available
+09.70 .2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0. |
 Kexin |
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| 5 | MJD44H11 | Complementary Power Transistors MJD44H11 (NPN), MJD45H11 (PNP)
Complementary Power Transistors
DPAK for Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Lead Formed for Surfa |
 ON Semiconductor |
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| 4 | MJD44H11 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD44H11/D
Complementary Power Transistors
• • • • • • •
MJD44H11 * PNP MJD45H11 *
*Motorola Preferred Device
NPN
DPAK For Surface Mount Applications
. . . for general purpose power and switching such as output or drive |
 Motorola Semiconductors |
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