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Datasheet MJE521 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MJE521 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE521
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 40 V(Min) ·DC Current Gain-
: hFE = 40(Min) @ IC= 1A ·Complement to Type MJE371
APPLICATIONS ·Designed for use in general−purpose ampli |
 Inchange Semiconductor |
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| 5 | MJE521 | POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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 Central Semiconductor |
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| 4 | MJE521 | Plastic Medium-Power NPN Silicon Transistor MJE521
Plastic Medium−Power NPN Silicon Transistor
These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
Features
• DC Current Gain − hFE = 40 (Min) @ IC
= 1.0 |
 ON Semiconductor |
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| 3 | MJE521 | 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE521/D
MJE521 Plastic Medium-Power NPN Silicon Transistor
. . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. |
 Motorola Semiconductors |
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