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Datasheet MJE803 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | MJE803 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications |
 Central Semiconductor |
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| 9 | MJE803 | SILICON NPN POWER DARLINGTON TRANSISTORS MJE802 MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power li |
 ST Microelectronics |
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| 8 | MJE803 | Monolithic Construction With Built-in Base- Emitter Resistors MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Max |
 Fairchild |
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| 7 | MJE803 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE700/D
PNP
Plastic Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic |
 Motorola Semiconductors |
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