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Datasheet MMBTH10L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MMBTH10L | VHF/UHF Transistor MMBTH10LT1, MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features http://onsemi.com
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector-Emitter Voltag |
 ON |
 |
| 5 | MMBTH10LT1 | NPN Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBTH10LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.225 W (Tamb=25℃)
Collector current
ICM: 0.05 Collector-base voltage
A
V(BR)CBO: 30 V
Operating and |
 Tuofeng Semiconductor |
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| 4 | MMBTH10LT1 | VHF/UHF Transistors WILLAS
FM120-M+ MMBTH10LTT1HRU
1.0A SUVRFHACFE /MUOUHNTFSCTHrOaTTnKYsBiAsRtRoIErRsRECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
zbeWtteerdreecvlaerresethlaetatkhaegme actuerrrieanl ot fa |
 WILLAS |
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| 3 | MMBTH10LT1 | VHF/UHF Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTH10LT1/D
VHF/UHF Transistor
MMBTH10LT1
COLLECTOR 3 1 BASE
3
Motorola Preferred Device
NPN Silicon
2 EMITTER
1 2
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage |
 Motorola Semiconductors |
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