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Datasheet MMJT9435 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MMJT9435 | Bipolar Power Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Preliminary Data Sheet
PNP Silicon
• High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc
Bipolar Power Transistors
• Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ I |
 Motorola Semiconductors |
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| 1 | MMJT9435 | Bipolar Power Transistors PNP Silicon
MMJT9435
Preferred Device
Bipolar Power Transistors
PNP Silicon
Features
• Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • •
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 125 (Min) @ IC = 0.8 Adc hFE = 9 |
 ON Semiconductor |
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