Datasheet MRFE6S8046GNR1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRFE6S8046GNR1	RF Power Field Effect Transistors Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier	Freescale

MRFE6S8046G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRFE6S8046GNR1	RF Power Field Effect Transistors Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CD	Freescale

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Número de pieza	Descripción	Fabricantes	PDF
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