|
|
Datasheet MRFE6S9060NR1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MRFE6S9060NR1 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Freescale Semiconductor Technical Data
Document Number: MRFE6S9060N Rev. 1, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and |
Freescale Semiconductor |
MRFE6S9060 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MRFE6S9060NR1 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
Freescale Semiconductor |
Esta página es del resultado de búsqueda del MRFE6S9060NR1. Si pulsa el resultado de búsqueda de MRFE6S9060NR1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |