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Datasheet MRFE6S9130HR3 Equivalent ( PDF ) |
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| 1 | MRFE6S9130HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data
Document Number: MRFE6S9130H Rev. 0, 4/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amp |
 Freescale Semiconductor |
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MRFE6S9130 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| MRFE6S9130HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Freescale Semiconductor |
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| MRFE6S9130HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Freescale Semiconductor |
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