Datasheet MRFE6S9200HSR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRFE6S9200HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain an	Motorola Semiconductor Products

MRFE6S9200H Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRFE6S9200HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 M	Motorola Semiconductor Products
MRFE6S9200HR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 M	Motorola Semiconductor Products

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Número de pieza	Descripción	Fabricantes	PDF
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