Datasheet MRFE6VP61K25HR6 Equivalent ( PDF )

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1	MRFE6VP61K25HR6	RF Power Field Effect Transistors www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and p	Freescale Semiconductor

MRFE6VP61K25 Datasheet ( Hoja de datos ) - resultados coincidentes

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MRFE6VP61K25HSR6	RF Power Field Effect Transistors Datasheet.es Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (i	Freescale Semiconductor
MRFE6VP61K25HR6	RF Power Field Effect Transistors Datasheet.es Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (i	Freescale Semiconductor

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