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Datasheet MRFG35003M6T1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MRFG35003M6T1 | GALLIUM ARSENIDE PHEMT
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRFG35003M6T1/D
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Dev |
 Motorola Semiconductors |
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MRFG35003M Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| MRFG35003MT1 | The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR |
Motorola Semiconductors |
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| MRFG35003M6T1 | GALLIUM ARSENIDE PHEMT |
Motorola Semiconductors |
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| MRFG35003MT1 | RF Reference Design Library Gallium Arsenide PHEMT |
 Freescale Semiconductor |
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